Samsung Creates Dedicated HBM4 Line, Receives Positive Nvidia Feedback

Samsung is confident that it will bolster its HBM business during the HBM4 era. The company has decided to operate Phase 2 of its P4 facility at its Pyeongtaek campus as a 1c DRAM (6th gen 10nm-class) production line. This process plays a key role in the production of HBM4. Interestingly, this comes after the company allegedly received positive signals from its key client, Nvidia, regarding the performance of the 6th-gen memory chip.
Samsung ramps up HBM4 plans with Phase 2 expansion at Pyeongtaek
According to a report from Dailian, Samsung plans to begin construction of Phase 2 in the second quarter of 2026. The company also aims to reach operational readiness at the production hub by the first half of 2027. “This decision is intended to accommodate the HBM4 volume,” said an insider to the outlet. “This is a measure taken to address the rapidly increasing demand for next-generation products.”
Industry analysis expects that HBM4 and HBM4E volumes may reach peak levels between 2026 and 2028. This could be because of the growing demand for AI, cloud computing, and high-performance graphics applications. Samsung’s decision is likely a preemptive move to gain a foothold in the HBM market.
Meanwhile, according to a report from Newdaily, Samsung is currently conducting qualification tests for HBM4 with Nvidia. Industry sources say Nvidia reportedly gave positive feedback on chip performance, saying, “three will be good news.” While Nvidia typically does not share detailed performance metrics publicly, such feedback gives a strong signal that Samsung’s HBM4 is close to securing a supply contract.
Apart from client evaluations, Samsung has completed its Production Readiness Authorization (PRA) process for HBM4. This internal procedure suggests that the chip is ready to enter the mass production stage. Meanwhile, the company plans to showcase a higher bandwidth version of HBM4 at the International Solid-State Circuits Conference (ISSCC) in February 2026.










