Samsung May Begin Mass Production of LPDDR6 in H2 2025

For the first time, Samsung lost its position in the global DRAM market in terms of revenue and share in Q1 2025. The company is now trying hard to reclaim the top spot, adopting several fresh strategies. One such strategy is to start mass production of next-generation LPDDR6 memory chips early. Samsung aims to start making next-gen DRAM solutions in the second half of this year, hoping to take an early lead and secure deals with major clients.
Samsung reportedly plans to start mass production of LPDDR6 ahead of CXMT
While SK Hynix and Micron are key competitors of Samsung in the DRAM business, Chinese firm CXMT is also quickly catching up in this space, particularly making progress in the LPDDR segment. LPDDR is a type of DRAM designed for low-power products such as smartphones, IT devices, robots, and self-driving cars. Now that CXMT has started the development of the LPDDR6 chips, Samsung faces significant pressure.
Considering the current pace of development, industry analysts expect CXMT to start mass production of LPDDR6 as early as 2026. As the competition heats up, the Korean firm now reportedly aims to ramp up the production of next-generation low-power memory chips. According to Korean outlet Business Post, DS Division’s Vice Chairman Jeon Young-hyun recently said that Samsung has planned to mass-produce LPDDR6 chips using the 1c DRAM process in the second half of this year.
For the uninitiated, DRAM processes involve six generations: 1x, 1y, 1z, 1a, 1b, and 1c. With each new generation, circuit line widths shrink, leading to better performance and improved power efficiency. The industry refers to the latest generation (1c DRAM) as the 6th-generation 10 nm-class DRAM. This process will also play a big role in the development of next-generation HBM4 chips.
The report further claims that Samsung is aiming to supply its LPDDR6 chips for Qualcomm’s Snapdragon X Elite 2, which may debut in September 2025. If successful, the Korean behemoth will gain an advantage in next-generation low-power memory chip technology and face less competition from China’s CXMT.










